A new paper co-authored by AI-MI senior personnel Darrell Schlom, “High-mobility La-doped BaSnO₃ thin films with sheet carrier concentrations relevant to transistors,” was published in APL Materials on November 2, 2026 (APL Materials 14, 111101; doi:10.1063/5.0296731). Authors: Nicholas A. Parker, Seungmin Lee, Adedapo Oni, George N. Kotsonis, Kathy Azizie, Jisung Park, Hanjong Paik, Jacary Sapp, Jay R. Wright, Debdeep Jena, Huili Grace Xing, Dmitri A. Tenne, Punyashloka Debashis, Pratyush Buragohain, Raseong Kim, Rachel Steinhardt and Darrell G. Schlom. Congrats to the Team!
AI-MI’s Adam Braunschweig gives the Cornell Chemical and Biomolecular Engineering seminar (Nov 16)
AI-MI senior personnel Adam Braunschweig (Advanced Science Research Center, City University of New York) will give the Cornell Chemical and Biomolecular Engineering CHEME 7900 seminar on Monday, November 16, 2026, 9:05–10:05 am, in 155 Olin Hall:…

