New AI-MI–supported publication in APL Materials: High-mobility La-doped BaSnO₃ thin films with sheet carrier concentrations relevant to transistors

Posted: November 9, 2026

A new paper co-authored by AI-MI senior personnel Darrell Schlom, “High-mobility La-doped BaSnO₃ thin films with sheet carrier concentrations relevant to transistors,” was published in APL Materials on November 2, 2026 (APL Materials 14, 111101; doi:10.1063/5.0296731). Authors: Nicholas A. Parker, Seungmin Lee, Adedapo Oni, George N. Kotsonis, Kathy Azizie, Jisung Park, Hanjong Paik, Jacary Sapp, Jay R. Wright, Debdeep Jena, Huili Grace Xing, Dmitri A. Tenne, Punyashloka Debashis, Pratyush Buragohain, Raseong Kim, Rachel Steinhardt and Darrell G. Schlom. Congrats to the Team!

Source: APL Materials, doi:10.1063/5.0296731

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