The AI-MI Retreat in New York City on November 8, 2025 marked our first in-person AI-MI internal meeting.
New AI-MI–supported publication in APL Materials: High-mobility La-doped BaSnO₃ thin films with sheet carrier concentrations relevant to transistors
A new paper co-authored by AI-MI senior personnel Darrell Schlom, “High-mobility La-doped BaSnO₃ thin films with sheet carrier concentrations relevant to transistors,” was published in APL Materials on November 2, 2026 (APL Materials 14, 111101;...